INTERFACE QUALITY OF SIGE OXIDE PREPARED BY RF PLASMA ANODIZATION

被引：19

作者：

GOH, IS

HALL, S

ECCLESTON, W

ZHANG, JF

WERNER, K

机构：

[1] LIVERPOOL JOHN MOOREKS UNIV,DEPT ELECT & ELECTR ENGN,LIVERPOOL,ENGLAND

[2] DELFT UNIV TECHNOL,DIMES,DELFT,NETHERLANDS

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 23期

关键词：

SPUTTER DEPOSITION; SILICON-GERMANIUM; OXIDISATION PLASMA;

D O I：

10.1049/el:19941315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The latest progress in RF plasma anodisation of SiGe alloys at 80-degrees-C is reported. Compared with the authors' previous results, considerable improvement in interfacial quality has been achieved. However, unlike the thermally grown samples, no negative fixed oxide charges were found.

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收藏

页码：1988 / 1989

页数：2

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