ASSESSMENT OF PLASMA-GROWN OXIDES ON SI-GE SUBSTRATES

被引：13

作者：

HALL, S

ZHANG, JF

TAYLOR, S

ECCLESTON, W

BEAHAN, P

TATLOCK, GT

GIBBINGS, CJ

SMITH, C

TUPPEN, C

机构：

[1] UNIV LIVERPOOL,DEPT MAT SCI & ENGN,LIVERPOOL L69 3BX,ENGLAND

[2] BRITISH TELECOMMUN PLC,IPSWICH IP5 7RE,SUFFOLK,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90419-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：57 / 64

页数：8

共 8 条

[1] DISLOCATION NUCLEATION AND PROPAGATION IN SI0.95GE0.05 LAYERS ON SILICON [J].

GIBBINGS, CJ ;

TUPPEN, CG ;

HOCKLY, M .

APPLIED PHYSICS LETTERS, 1989, 54 (02) :148-150

[2]

GIBBINGS CJ, 1988, MATERIALS RES SOC S, V102, P311

[3] KINETICS AND MECHANISM OF OXIDATION OF SIGE - DRY VERSUS WET OXIDATION [J].

LEGOUES, FK ;

ROSENBERG, R ;

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1989, 54 (07) :644-646

[4] PHYSICS AND APPLICATIONS OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

PEOPLE, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1696-1710

[5]

SMITH C, 1987, IEEE BIPOLAR CIRCUIT

[6] SI/GE0.3SI0.7/SI HETEROJUNCTION BIPOLAR-TRANSISTOR MADE WITH SI MOLECULAR-BEAM EPITAXY [J].

TATSUMI, T ;

HIRAYAMA, H ;

AIZAKI, N .

APPLIED PHYSICS LETTERS, 1988, 52 (11) :895-897

[7] THEORY FOR THE PLASMA ANODIZATION OF SILICON UNDER CONSTANT VOLTAGE AND CONSTANT CURRENT CONDITIONS [J].

TAYLOR, S ;

ECCLESTON, W ;

BARLOW, KJ .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (11) :6515-6522

[8] THE EFFECTS OF MISFIT DISLOCATION NUCLEATION AND PROPAGATION ON SI/SI1-XGEX CRITICAL THICKNESS VALUES [J].

TUPPEN, CG ;

GIBBINGS, CJ ;

HOCKLY, M .

JOURNAL OF CRYSTAL GROWTH, 1989, 94 (02) :392-404

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