INTERFACE PROPERTIES OF OXIDIZED GERMANIUM-DOPED SILICON

被引：3

作者：

NEUGROSCHEL, A ^{[1
]}

MARGALIT, S ^{[1
]}

BARLEV, A ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL, FAC ELECT ENGN, HAIFA, ISRAEL

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1973年 / 6卷 / 13期

关键词：

D O I：

10.1088/0022-3727/6/13/309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1606 / 1621

页数：16

共 22 条

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[7] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J].

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