DEFECT DENSITIES AND HYDROGEN DIFFUSION IN HYDROGENATED AMORPHOUS SI-BASED ALLOYS

被引：15

作者：

ROBERTSON, J

机构：

[1] National Power Labs, Leatherhead

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 26期

关键词：

D O I：

10.1063/1.105696

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The density of Si dangling bond defects in plasma-deposited Si-rich a-Si1-xCx:H and a-Si1-xNx:H is argued to depend primarily on deposition temperature via the hydrogen diffusion rate. The optimum temperature equals about 0.62 of the bulk-bonded hydrogen evolution temperature, or about 500-degrees-C for a-Si3N4:H. A model of hydrogen diffusion in alloys is proposed.

引用

收藏

页码：3425 / 3427

页数：3

相关论文

共 23 条

[1] VARIATION IN THE STOICHIOMETRY OF THIN SILICON-NITRIDE INSULATING FILMS ON SILICON AND ITS CORRELATION WITH MEMORY TRAPS [J].

BAILEY, RS ;

KAPOOR, VJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :484-487

[2] ELECTRONIC AND OPTICAL-PROPERTIES OF A-SI1-XCX FILMS PREPARED FROM A H2-DILUTED MIXTURE OF SIH4 AND CH4 [J].

BAKER, SH ;

SPEAR, WE ;

GIBSON, RAG .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1990, 62 (02) :213-223

[3] THE ROLE OF HYDROGEN IN A-SI-H - RESULTS OF EVOLUTION AND ANNEALING STUDIES [J].

BEYER, W ;

WAGNER, H .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :161-168

[4]

BEYER W, 1987, J NONCRYST SOLIDS, V97, P1017

[5]

BEYER W, 1987, MAT RES S P, V95, P317

[6] SIMILARITIES, DIFFERENCES, AND TRENDS IN THE PROPERTIES OF INTERSTITIAL-H IN CUBIC-C, CUBIC-SI, CUBIC-BN, CUBIC-BP, CUBIC-A1P, AND CUBIC-SIC [J].

CHU, CH ;

ESTREICHER, SK .

PHYSICAL REVIEW B, 1990, 42 (15) :9486-9495

[7] BONDING CONFIGURATION AND DEFECTS IN AMORPHOUS SINX-H FILMS [J].

HASEGAWA, S ;

MATSUDA, M ;

KURATA, Y .

APPLIED PHYSICS LETTERS, 1991, 58 (07) :741-743

[8] ELECTRON-SPIN-RESONANCE STUDY OF DEFECTS IN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITED SILICON-NITRIDE [J].

JOUSSE, D ;

KANICKI, J ;

KRICK, DT ;

LENAHAN, PM .

APPLIED PHYSICS LETTERS, 1988, 52 (06) :445-447

[9] ELECTRICALLY ACTIVE POINT-DEFECTS IN AMORPHOUS-SILICON NITRIDE - AN ILLUMINATION AND CHARGE INJECTION STUDY [J].

KRICK, DT ;

LENAHAN, PM ;

KANICKI, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (07) :3558-3563

[10] PREPARATION OF HIGHLY PHOTOSENSITIVE HYDROGENATED AMORPHOUS SI-C ALLOYS FROM A GLOW-DISCHARGE PLASMA [J].

MATSUDA, A ;

YAMAOKA, T ;

WOLFF, S ;

KOYAMA, M ;

IMANISHI, Y ;

KATAOKA, H ;

MATSUURA, H ;

TANAKA, K .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (11) :4025-4027