DEPENDENCE OF THE FLAT-BAND POTENTIAL OF N-TYPE GAAS ON THE REDOX POTENTIAL IN METHANOL AND ACETONITRILE

被引:18
作者
BA, B [1 ]
FOTOUHI, B [1 ]
GABOUZE, N [1 ]
GOROCHOV, O [1 ]
CACHET, H [1 ]
机构
[1] LAB PHYS LIQUIDES & ELECTROCHIM,F-75252 PARIS 05,FRANCE
来源
JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1992年 / 334卷 / 1-2期
关键词
D O I
10.1016/0022-0728(92)80577-Q
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The electrochemical behaviour of n-type GaAs has been studied in non-aqueous media. The results obtained indicate that the Fermi level of the semiconductor is pinned. Redox couples whose potentials are more negative than -0.3 V vs. Ago/Ag+ in CH3CN (in methanol, -0.2 V vs. Ag0/Ag+ in CH3OH) produce a negative displacement of the flat-band position in both solvents. Results are interpreted by an equilibration between the redox potential of the solution and surface states situated above the valence band edge of the semiconductor. Couples whose potentials are more positive than the valence band edge (as determined in the redox-free supporting electrolyte) inject holes into the valence band and produce a positive flat-band shift leading to the equilibration of the valence band edge with the potential of the redox reagent. The latter behaviour is observed only in CH3CN.
引用
收藏
页码:263 / 277
页数:15
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