STEADY-STATE RECOMBINATION IN SEMICONDUCTORS CONTAINING 2 OR MORE TRAPPING LEVELS

被引：1

作者：

CURTIS, OL ^{[1
]}

SROUR, JR ^{[1
]}

机构：

[1] NORTHROP RES & TECHNOL CTR,HAWTHORNE,CA 90250

来源：

关键词：

D O I：

10.1063/1.1663319

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：792 / 794

页数：3

共 4 条

[1] STEADY-STATE PHOTOCONDUCTIVITY IN PRESENCE OF TRAPS [J].

CURTIS, OL .

PHYSICAL REVIEW, 1968, 172 (03) :773-&

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[3] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842

[4] GAMMA IRRADIATION OF SILICON .3. LEVELS IN P-TYPE MATERIAL [J].

SONDER, E ;

TEMPLETO.LC .