HIGHLY SENSITIVE THERMALLY DEVELOPABLE POSITIVE RESIST SYSTEMS

被引：39

作者：

ITO, H

UEDA, M

SCHWALM, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2259 / 2263

页数：5

共 22 条

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