DISLOCATION INTERACTIONS IN STRAINED-LAYER STRUCTURES GROWN ON GAAS AND SI SUBSTRATES

被引：14

作者：

HAMAGUCHI, N ^{[1
]}

HUMPHREYS, TP ^{[1
]}

MOORE, DJ ^{[1
]}

PARKER, CA ^{[1
]}

BEDAIR, SM ^{[1
]}

TARN, JCL ^{[1
]}

JIANG, BL ^{[1
]}

ELMASRY, N ^{[1
]}

RADZIMSKI, ZJ ^{[1
]}

ROZGONYI, GA ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT MAT SCI & ENGN,RALEIGH,NC 27695

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90566-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：449 / 458

页数：10

共 25 条

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY
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[2] GEXSI1-X/SI STRAINED-LAYER SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY
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[3] A NEW GAASP-INGAAS STRAINED-LAYER SUPER-LATTICE LIGHT-EMITTING DIODE
BEDAIR, SM
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TIMMONS, M
TISCHLER, MA
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (02) : 45 - 47
[4] DODSON BW, 1987, APPL PHYS LETT, V51, P1326
[5] EFFECTIVENESS OF STRAINED-LAYER SUPERLATTICES IN REDUCING DEFECTS IN GAAS EPILAYERS GROWN ON SILICON SUBSTRATES
ELMASRY, N
TARN, JCL
HUMPHREYS, TP
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KARAM, NH
BEDAIR, SM
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (20) : 1608 - 1610
[6] COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100)
FIORY, AT
BEAN, JC
FELDMAN, LC
ROBINSON, IK
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1227 - 1229
[7] DEPENDENCE OF CRITICAL LAYER THICKNESS ON STRAIN FOR INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES
FRITZ, IJ
PICRAUX, ST
DAWSON, LR
DRUMMOND, TJ
LAIDIG, WD
ANDERSON, NG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 967 - 969
[8] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY
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FRITZ, IJ
DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (05) : 377 - 379
[9] HAMAGUCHI N, 1987, MATER RES SOC S P, V102, P541
[10] Hirth J. P., 1986, South African Journal of Physics, V9, P72

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