FULLY MONOLITHIC 22 GHZ-BAND ALGAAS/GAAS HBT OSCILLATOR

被引：1

作者：

HAYAMA, N ^{[1
]}

SHIMIZU, J ^{[1
]}

HONJO, K ^{[1
]}

机构：

[1] NEC CORP LTD,OPTOELECTR RES LABS,MIYAMAE KU,KAWASAKI,KANAGAWA 213,JAPAN

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 20期

关键词：

OSCILLATORS; TRANSISTORS; CIRCUIT DESIGN;

D O I：

10.1049/el:19911156

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The large signal design and performance is described for the fully monolithic 22 GHz-band oscillator implemented using a selfaligned AlGaAs/GaAs heterojunction bipolar transistor. The developed oscillator has exhibited an output power of 6.2 dBm at 22.16 GHz with a collector efficiency of 9.5%, and phase noise of -78 dBc/Hz at 100 kHz off-carrier under free-running conditions. These results were in good agreement with the designed results obtained using a harmonic balance simulator.

引用

页码：1862 / 1863

页数：2

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