METHOD TO DETERMINE MINORITY-CARRIER LIFETIME IN GAAS LIGHT-EMITTING-DIODES

被引：13

作者：

MULLER, J

REICHL, H

BERNT, H

机构：

[1] Institut für Festkörpertechnologie der Fraunhofer-Gesellschaft für Angewandte Forschung, 8 München 60

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 03期

关键词：

D O I：

10.1016/0038-1101(79)90030-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for determining the minority carrier lifetime from the frequency dependence of the a.c. photo response of a p-n junction is described. Measurements were carried out on zinc-diffused GaAs-LEDs. The dependence of the light output power on the measured lifetimes was linear. © 1979.

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页码：257 / 260

页数：4

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