PHOTOCATHODIC HYDROGENATION OF PARA-TYPE SILICON

被引：16

作者：

DEMIERRY, P ^{[1
]}

ETCHEBERRY, A ^{[1
]}

AUCOUTURIER, M ^{[1
]}

机构：

[1] CNRS,ELECTROCHIM INTERFACIALE LAB,F-92195 MEUDON,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 02期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.347377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrolytic technique is shown to introduce hydrogen into p-type silicon at room temperature. The penetration depths investigated by secondary ion mass spectroscopy are found to be strongly dependent on the doping level. These differences are explained in terms of a donor hydrogen-related level close to the midgap.

引用

页码：1099 / 1101

页数：3

共 19 条

[1] Capacitance-voltage profiling and the characterisation of III-V semiconductors using electrolyte barriers [J].

Blood, P .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (01) :7-27

[2]

CHEVALLIER J, 1988, ANNU REV MATER SCI, V18, P219

[3] EFFECT OF SURFACE PREPARATIONS ON ELECTRICAL AND CHEMICAL SURFACE-PROPERTIES OF P-TYPE SILICON [J].

DEMIERRY, P ;

BALLUTAUD, D ;

AUCOUTURIER, M ;

ETCHEBERRY, A .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) :2966-2973

[4] ON THE MECHANISM OF HYDROGEN EVOLUTION AT GAAS ELECTRODES [J].

GERISCHER, H ;

MULLER, N ;

HAAS, O .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1981, 119 (01) :41-48

[5]

GERISCHER H, 1960, AN REAL SOC ESPAN B, V56, P535

[6] PERMEATION OF HYDROGEN INTO SILICON DURING LOW-ENERGY HYDROGEN-ION BEAM BOMBARDMENT [J].

HORN, MW ;

HEDDLESON, JM ;

FONASH, SJ .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :490-492

[7]

JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166

[8] MECHANISM FOR HYDROGEN COMPENSATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].

JOHNSON, NM .

PHYSICAL REVIEW B, 1985, 31 (08) :5525-5528

[9]

JOHNSON NM, 1989, 3RD INT C SHALL IMP, P415

[10] MODELING OF HYDROGEN DIFFUSION IN N-TYPE AND P-TYPE SILICON [J].

MATHIOT, D .

PHYSICAL REVIEW B, 1989, 40 (08) :5867-5870

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