IMPROVED CHARACTERIZATION OF IMPURITIES IN SEMICONDUCTORS FROM THERMAL CARRIER MEASUREMENTS

被引：8

作者：

BLAKEMORE, JS

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1054 / 1059

页数：6

共 31 条

[1]

Blakemore J. S., 1962, SEMICONDUCTOR STATIS

[2] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J].

BLAKEMORE, JS .

PHILOSOPHICAL MAGAZINE, 1959, 4 (41) :560-576

[3]

BOER JHD, 1935, PHYSICA, V2, P286

[4] PREPARATION AND PROPERTIES OF MERCURY-DOPED GERMANIUM [J].

BORRELLO, SR ;

LEVINSTEIN, H .

JOURNAL OF APPLIED PHYSICS, 1962, 33 (10) :2947-&

[5] ANALYSIS OF LATTICE AND IONIZED IMPURITY SCATTERING IN P-TYPE GERMANIUM [J].

BROWN, DM ;

BRAY, R .

PHYSICAL REVIEW, 1962, 127 (05) :1593-&

[6]

BUBE RH, 1960, PHOTOCONDUCTIVITY SO, pCH9

[7] EXCITATION SPECTRA AND PHOTO-IONIZATION OF NEUTRAL MERCURY CENTERS IN GERMANIUM [J].

CHAPMAN, RA ;

HUTCHINSON, WG .

PHYSICAL REVIEW, 1967, 157 (03) :615-+

[8] EMISSION COEFFICIENTS FOR ELECTRON AND HOLE TRAPS IN SILICON [J].

CHEN, JW ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1979, 22 (07) :684-686

[9] TEMPERATURE DEPENDENT ENERGY LEVELS IN STATISTICAL MECHANICS [J].

ELCOCK, EW ;

LANDSBERG, PT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (02) :161-168

[10] THERMODYNAMICAL ANALYSIS OF OPTIMAL RECOMBINATION CENTERS IN THYRISTORS [J].

ENGSTROM, O ;

ALM, A .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1571-1576

← 1 2 3 4 →