DOPING OF A QUANTUM-DOT

被引：142

作者：

TSU, R

BABIC, D

机构：

[1] University of North Carolina, Charlotte

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The doping of a quantum dot is an important issue particularly because the luminescence of porous silicon has been attributed to quantum confinement. Since electrochemical etching and possible electroluminescence devices are intimately connected with extrinsic conduction, the quantum size effect on doping, including interactions with induced charges at the dielectric discontinuity, requires investigation.

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页码：1806 / 1808

页数：3

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