ISSUES OF II-VI MOLECULAR-BEAM EPITAXY GROWTH TOWARD A LONG LIFETIME BLUE/GREEN LASER-DIODE

被引：19

作者：

GRILLO, DC ^{[1
]}

RINGLE, MD ^{[1
]}

HUA, GC ^{[1
]}

HAN, J ^{[1
]}

GUNSHOR, RL ^{[1
]}

HOVINEN, M ^{[1
]}

NURMIKKO, AV ^{[1
]}

机构：

[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.588145

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Although many advances in the field of II-VI laser diodes have been reported since the first demonstrations of II-VI lasers in the summer of 1991, several obstacles still exist along the path towards long-lived II-VI laser diodes. This article will discuss mechanisms which lead to the degradation of the pseudomorphic separate confinement heterostructure laser diodes. Point defects and stacking faults are shown to play an important role in the degradation of these laser diode structures. The importance of controlling the substrate temperature to control the strain will be shown; a method to improve substrate temperature control will be provided.

引用

收藏

页码：720 / 723

页数：4

相关论文

共 16 条

[1] GRADED BAND-GAP OHMIC CONTACT TO P-ZNSE [J].

FAN, Y ;

HAN, J ;

HE, L ;

SARAIE, J ;

GUNSHOR, RL ;

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

HUA, GC ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1992, 61 (26) :3160-3162

[2] BLUE-GREEN INJECTION-LASERS CONTAINING PSEUDOMORPHIC ZN1-XMGXSYSE1-Y CLADDING LAYERS AND OPERATING UP TO 394-K [J].

GAINES, JM ;

DRENTEN, RR ;

HABERERN, KW ;

MARSHALL, T ;

MENSZ, P ;

PETRUZZELLO, J .

APPLIED PHYSICS LETTERS, 1993, 62 (20) :2462-2464

[3] PSEUDOMORPHIC SEPARATE-CONFINEMENT HETEROSTRUCTURE BLUE-GREEN DIODE-LASERS [J].

GRILLO, DC ;

FAN, Y ;

HAN, J ;

HE, L ;

GUNSHOR, RL ;

SALOKATVE, A ;

HAGEROTT, M ;

JEON, H ;

NURMIKKO, AV ;

HUA, GC ;

OTSUKA, N .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2723-2725

[4] MBE GROWTH AND MICROSTRUCTURAL EVALUATION OF ZN(S,SE)-BASED LEDS AND DIODE-LASERS [J].

GRILLO, DC ;

XIE, W ;

KOBAYASHI, M ;

GUNSHOR, RL ;

HUA, GC ;

OTSUKA, N ;

JEON, H ;

DING, J ;

NURMIKKO, AV .

JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) :441-444

[5]

HAASE M, 1991, APPL PHYS LETT, V59, P1273

[6] THE INTERPRETATION OF X-RAY ROCKING CURVES FROM III-V SEMICONDUCTOR-DEVICE STRUCTURES [J].

HALLIWELL, MAG ;

LYONS, MH ;

HILL, MJ .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (02) :523-531

[7] MOLECULAR-BEAM EPITAXY GROWTH OF PSEUDOMORPHIC II-VI MULTILAYERED STRUCTURES FOR BLUE-GREEN LASER-DIODES AND LIGHT-EMITTING-DIODES [J].

HAN, J ;

HE, L ;

GRILLO, DC ;

CLARK, SM ;

GUNSHOR, RL ;

JEON, H ;

SALOKATVE, A ;

NURMIKKO, AV ;

HUA, GC ;

OTSUKA, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02) :1254-1257

[8] STRAIN-INDUCED DEGRADATION OF GAAS INJECTION LASERS [J].

HARTMAN, RL ;

HARTMAN, AR .

APPLIED PHYSICS LETTERS, 1973, 23 (03) :147-149

[9] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].

HENRY, CH ;

LANG, DV .

PHYSICAL REVIEW B, 1977, 15 (02) :989-1016

[10] MICROSTRUCTURE STUDY OF A DEGRADED PSEUDOMORPHIC SEPARATE-CONFINEMENT HETEROSTRUCTURE BLUE-GREEN LASER-DIODE [J].

HUA, GC ;

OTSUKA, N ;

GRILLO, DC ;

FAN, Y ;

HAN, J ;

RINGLE, MD ;

GUNSHOR, RL ;

HOVINEN, M ;

NURMIKKO, AV .

APPLIED PHYSICS LETTERS, 1994, 65 (11) :1331-1333