CHARGE TRAPPING IN SILICON-RICH SI3N4 THIN-FILMS

被引：20

作者：

BUCHANAN, DA ^{[1
]}

ABRAM, RA ^{[1
]}

MORANT, MJ ^{[1
]}

机构：

[1] UNIV DURHAM,SCH ENGN & APPL SCI,DURHAM DH1 3LE,ENGLAND

来源：

关键词：

D O I：

10.1016/0038-1101(87)90055-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1295 / 1301

页数：7

共 8 条

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[2] CONTACT CURRENTS IN SILICON-NITRIDE
ARNETT, PC
DIMARIA, DJ
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) : 2092 - 2097
[3] BUCHANAN DA, 1986, THESIS U DURHAM
[4] MERZBAUER E, 1961, QUANTUM MECHANICS, P93
[5] HIGH-FIELD CONDUCTION PROCESSES IN SILICON-NITRIDE FILMS IN PRESENCE OF CHARGE TRAPPING
POPOVA, LI
ANTOV, BZ
VITANOV, PK
[J]. THIN SOLID FILMS, 1976, 36 (01) : 157 - 160
[6] GAP STATES IN SILICON-NITRIDE
ROBERTSON, J
POWELL, MJ
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (04) : 415 - 417
[7] ROSS EC, 1969, RCA REV, V30, P366
[8] ELECTRON AND HOLE TRANSPORT IN CVD SI3N4 FILMS
YUN, BH
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (04) : 256 - 258