CARRIER FLUCTUATION NOISE IN A MOSFET CHANNEL DUE TO TRAPS IN OXIDE

被引：29

作者：

JINDAL, RP

VANDERZIEL, A

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(78)90317-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：901 / 903

页数：3

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[5]

Katto H, 1975, J JPN SOC APPL PHY S, V44, P243

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