SHALLOW LEVEL TRAPPING AND DETRAPPING IN SI(LI) DETECTORS AT LOW TEMPERATURES

被引：5

作者：

MARTINI, M

MCMATH, TA

机构：

[1] General Physics Branch, Chalk River Nuclear Laboratories, Atomic Energy of Canada Limited, Chalk River, Ont.

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 12期

关键词：

D O I：

10.1063/1.1652693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Trapping-detrapping pulse shapes have been observed in two Si(Li) detectors in the temperature range 8.5-70°K. A semiquantitative treatment leads to the conclusion that shallow trapping levels are responsible for the observed phenomena. It appears likely that these levels correspond to the donor (Li) and acceptor (B) dopants; if this hypothesis is confirmed by further experimental work it establishes a low-temperature limit on the use of semiconductor detectors for γ-ray and high-energy particle spectroscopy. © 1969 The American Institute of Physics.

引用

页码：374 / &

共 12 条

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[9]

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[10]

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