DYNAMICS OF PULSED CO2-LASER ANNEALING OF SILICON

被引：18

作者：

BHATTACHARYYA, A ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 05期

关键词：

D O I：

10.1088/0022-3727/14/5/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L67 / L72

页数：6

共 11 条

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[2]

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[3] THEORETICAL CONSIDERATIONS REGARDING PULSED CO2-LASER ANNEALING OF SILICON [J].

BHATTACHARYYA, A ;

STREETMAN, BG .

SOLID STATE COMMUNICATIONS, 1980, 36 (08) :671-675

[4]

BHATTACHARYYA A, J APPL PHYS

[5]

CELLER GK, 1979, AIP C P, V50, P381

[6]

GLASSBRENNER AJ, 1964, PHYS REV A, V134, P1059

[7]

Hultgren, 1973, SELECTED VALUES THER

[8]

SHASHKOV YM, 1966, FIZ TVERD TELA+, V8, P447

[9]

Shvarev K. M., 1975, Soviet Physics - Solid State, V16, P2111

[10] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J].

SURKO, CM ;

SIMONS, AL ;

AUSTON, DH ;

GOLOVCHENKO, JA ;

SLUSHER, RE ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1979, 34 (10) :635-637

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