DOPING-DEPENDENCE OF LUMINESCENCE IN INP AT VERY HIGH EXCITATION LEVELS

被引:8
作者
GOBEL, E
QUEISSER, HJ
PILKUHN, MH
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D O I
10.1016/0038-1098(71)90537-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:429 / &
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共 18 条
[1]  
ALAGUILLAUME CB, 1970, J LUMIN, V1, P315
[2]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[4]  
ERA K, 1970, J LUMIN, V1, P514
[5]   EFFECTS OF EXCITATION IN INTENSITY ON PHOTOLUMINESCENCE NEAR BADGAP OF N-INP [J].
HEIM, U ;
RODER, O ;
PILKUHN, MH .
SOLID STATE COMMUNICATIONS, 1969, 7 (17) :1173-&
[6]   OPTICAL FREQUENCIES AND DIELECTRIC CONSTANTS OF INP [J].
HILSUM, C ;
FRAY, S ;
SMITH, C .
SOLID STATE COMMUNICATIONS, 1969, 7 (15) :1057-&
[7]   MANY-BODY WAVELENGTH SHIFT IN A SEMICONDUCTOR LASER [J].
HOLONYAK, N ;
JOHNSON, MR ;
ROSSI, JA ;
GROVES, WO .
APPLIED PHYSICS LETTERS, 1968, 12 (04) :151-&
[8]  
KOHL F, 1970, THESIS FRANKFURT
[9]  
MADGE D, 1970, PHYS REV LETT, V24, P890
[10]   RECOMBINATION EMISSION IN INSB [J].
MOORADIA.A ;
FAN, HY .
PHYSICAL REVIEW, 1966, 148 (02) :873-&