ATOMIC LAYER EPITAXY DEPOSITION PROCESSES

被引：12

作者：

BEDAIR, SM

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 01期

关键词：

D O I：

10.1116/1.587179

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Atomic layer epitaxy (ALE) is emerging as a promising epitaxial growth technique for thickness control at the atomic level. The article outlines recent progress in ALE of III-V and Si thin films. Also models describing the self-limiting processes will be outlined.

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页码：179 / 185

页数：7

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