ATOMIC LAYER EPITAXY OF DEVICE QUALITY GAAS

被引：22

作者：

COLAS, E ^{[1
]}

BHAT, R ^{[1
]}

SKROMME, BJ ^{[1
]}

NIHOUS, GC ^{[1
]}

机构：

[1] PACIFIC INT CTR HIGH TECHNOL RES,HONOLULU,HI 96826

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：2769 / 2771

页数：3

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