ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1460 - 1464

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532

[3] ISHII H, IN PRESS J CRYST GRO

[4] MORI K, 1986, 18 C SOL STAT DEV MA, P743

[5] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1572 - 1577

[6] NISHIZAWA J, 1985, J ELECTROCHEM SOC, V132, P1198

[7] SELF-LIMITING DEPOSITION OF GA ON A GAAS SURFACE BY THERMAL-DECOMPOSITION OF DIETHYLGALLIUMCHLORIDE OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1124 - 1126

[8] GROWTH OF GAAS, INAS, AND GAAS/INAS SUPERLATTICE STRUCTURES AT LOW SUBSTRATE-TEMPERATURE BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 342 - 346

[9] PLANAR DOPING BY INTERRUPTED MOVPE GROWTH OF GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 15 - 20

[10] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683

[1] ATOMIC-LAYER GROWTH OF GAAS BY MODULATED-CONTINUOUS-WAVE LASER METAL-ORGANIC VAPOR-PHASE EPITAXY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (05): : 1460 - 1464

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532

[3] ISHII H, IN PRESS J CRYST GRO

[4] MORI K, 1986, 18 C SOL STAT DEV MA, P743

[5] GALLIUM-ARSENIDE THIN-FILMS BY LOW-TEMPERATURE PHOTOCHEMICAL PROCESSES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1572 - 1577

[6] NISHIZAWA J, 1985, J ELECTROCHEM SOC, V132, P1198

[7] SELF-LIMITING DEPOSITION OF GA ON A GAAS SURFACE BY THERMAL-DECOMPOSITION OF DIETHYLGALLIUMCHLORIDE OBSERVED BY X-RAY PHOTOELECTRON-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1124 - 1126

[8] GROWTH OF GAAS, INAS, AND GAAS/INAS SUPERLATTICE STRUCTURES AT LOW SUBSTRATE-TEMPERATURE BY MOVPE [J]. JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) : 342 - 346

[9] PLANAR DOPING BY INTERRUPTED MOVPE GROWTH OF GAAS [J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 15 - 20

[10] SELF-LIMITING MECHANISM IN THE ATOMIC LAYER EPITAXY OF GAAS [J]. APPLIED PHYSICS LETTERS, 1986, 48 (24) : 1681 - 1683