GROWTH OF GAAS, INAS, AND GAAS/INAS SUPERLATTICE STRUCTURES AT LOW SUBSTRATE-TEMPERATURE BY MOVPE

被引：17

作者：

OHNO, H

OHTSUKA, S

OHUCHI, A

MATSUBARA, T

HASEGAWA, H

机构：

[1] Hokkaido Univ, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

The X-ray diffraction patterns were taken at the High Brilliance X-ray Laboratory of Hokkaido University. This work was supported by a Grant-in-Aid for Special Project Research (#61114003) and partly by a Grant-in-Aid for Specially Promoted Research (#60965002); both from the Ministry of Education; Science and Culture;

D O I：

10.1016/0022-0248(88)90550-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：342 / 346

页数：5

共 14 条

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[2] DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546
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[7] PLANAR DOPING BY INTERRUPTED MOVPE GROWTH OF GAAS
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[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 15 - 20
[8] ON THE REDUCTION OF THE ELECTRON-LO PHONON-SCATTERING IN A SEMICONDUCTOR SUPERLATTICE
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[9] SUNTOLA T, 1984, UNPUB 16TH C SOL STA, P647
[10] GROWTH OF A NOVEL INAS-GAAS STRAINED LAYER SUPERLATTICE ON INP
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 569 - 571

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