GROWTH OF A (GAAS)N/(INAS)N SUPERLATTICE SEMICONDUCTOR BY MOLECULAR-BEAM EPITAXY

被引：18

作者：

OHNO, H ^{[1
]}

KATSUMI, R ^{[1
]}

TAKAMA, T ^{[1
]}

HASEGAWA, H ^{[1
]}

机构：

[1] HOKKAIDO UNIV,FAC ENGN,DEPT APPL PHYS,SAPPORO,HOKKAIDO 060,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.L682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L682 / L684

页数：3

共 11 条

[1] ARSENIC STABILIZATION OF INP SUBSTRATES FOR GROWTH OF GAXIN1-XAS LAYERS BY MOLECULAR-BEAM EPITAXY
DAVIES, GJ
HECKINGBOTTOM, R
OHNO, H
WOOD, CEC
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (03) : 290 - 292
[2] (INAS)1(GAAS)1 LAYERED CRYSTAL GROWN BY MOCVD
FUKUI, T
SAITO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L521 - L523
[3] HARRISON WA, 1980, ELECTRON STRUCTURE P, pCH7
[4] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) : 118 - 125
[5] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273
[6] NUCLEATION AND STRAIN RELAXATION AT THE INAS/GAAS(100) HETEROJUNCTION
SCHAFFER, WJ
LIND, MD
KOWALCZYK, SP
GRANT, RW
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 688 - 695
[7] GROWTH OF A NOVEL INAS-GAAS STRAINED LAYER SUPERLATTICE ON INP
TAMARGO, MC
HULL, R
GREENE, LH
HAYES, JR
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (06) : 569 - 571
[8] DAMPED OSCILLATIONS IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING GAAS MBE
VANHOVE, JM
LENT, CS
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 741 - 746
[9] THE DEPENDENCE OF RHEED OSCILLATIONS ON MBE GROWTH-PARAMETERS
VANHOVE, JM
PUKITE, PR
COHEN, PI
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 563 - 567
[10] OPTICAL-QUALITY GAINAS GROWN BY MOLECULAR-BEAM EPITAXY
WICKS, G
WOOD, CEC
OHNO, H
EASTMAN, LF
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (02) : 435 - 440

← 1 2 →