ELECTRIC-FIELD EFFECT ON ULTRATHIN YBA2CU3O7-DELTA GRAIN-BOUNDARY JOSEPHSON-JUNCTIONS

被引:10
作者
PETERSEN, K [1 ]
TAKEUCHI, I [1 ]
TALYANSKY, V [1 ]
DOUGHTY, C [1 ]
XI, XX [1 ]
VENKATESAN, T [1 ]
机构
[1] UNIV MARYLAND,DEPT PHYS & ASTRON,CTR SUPERCONDUCT RES,COLLEGE PK,MD 20742
关键词
D O I
10.1063/1.114500
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of electric field on ultrathin YBa2Cu3O7-delta grain boundary Josephson junctions has been investigated. A conventional metal insulator superconductor field effect transistor structure consisting of a Pr0.55Y0.45Ba2Cu3O7-delta/YBa2Cu3O7-delta bilayer channel, a crystalline SrTiO3 dielectric, and an Au gate electrode is deposited on a SrTiO3 bicrystal substrate. At high bias current (I(bias)much greater than I-c) the observed effect is compatible with a parallel resistor model using a value close to the bulk charge carrier density of YBa2Cu3O7-delta. At low bias current (I(bias)greater than or equal to I-c) an enhanced field effect not compatible with a parallel resistor model is observed. This enhanced effect is related to the field dependent dielectric properties of the crystalline SrTiO3 insulation layer. (C) 1995 American Institute of Physics.
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页码:1477 / 1479
页数:3
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