VPE ZNSE ON GAAS - PHOTO-LUMINESCENCE AND CONDUCTIVITY

[11] PHOSPHORUS AND ARSENIC IMPURITY CENTERS IN ZNSE .2. OPTICAL AND ELECTRICAL PROPERTIES [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 410 - &

[12] SHAW DW, 1975, CRYSTAL GROWTH THEOR

[13] APPLICATION OF AUGER DEPTH PROFILING TO METAL-SEMICONDUCTOR CONTACTS [J]. THIN SOLID FILMS, 1979, 57 (01) : 115 - 126

[14] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 903 - +

[15] CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 284 - 291

[16] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 95 - 109

[17] PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 352 - 354

[18] STUTIUS W, 1979, AM PHYS SOC M CHICAG

[19] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

[20] VAPOR-PHASE EPITAXIAL GROWTH AND SOME PROPERTIES OF ZNSE, ZNS, AND CDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 381 - &

[11] PHOSPHORUS AND ARSENIC IMPURITY CENTERS IN ZNSE .2. OPTICAL AND ELECTRICAL PROPERTIES [J]. PHYSICAL REVIEW B, 1971, 3 (02): : 410 - &

[12] SHAW DW, 1975, CRYSTAL GROWTH THEOR

[13] APPLICATION OF AUGER DEPTH PROFILING TO METAL-SEMICONDUCTOR CONTACTS [J]. THIN SOLID FILMS, 1979, 57 (01) : 115 - 126

[14] PHOTOELECTRONIC PROPERTIES OF ZNSE CRYSTALS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 903 - +

[15] CONDUCTION MECHANISM IN LOW-RESISTIVITY N-TYPE ZNSE PREPARED BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 284 - 291

[16] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 95 - 109

[17] PREPARATION OF LOW-RESISTIVITY N-TYPE ZNSE BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1981, 38 (05) : 352 - 354

[18] STUTIUS W, 1979, AM PHYS SOC M CHICAG

[19] SIMPLE THEORETICAL ESTIMATES OF ENTHALPY OF ANTISTRUCTURE PAIR FORMATION AND VIRTUAL-ENTHALPIES OF ISOLATED ANTISITE DEFECTS IN ZINCBLENDE AND WURTZITE TYPE SEMICONDUCTORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (03) : 423 - 429

[20] VAPOR-PHASE EPITAXIAL GROWTH AND SOME PROPERTIES OF ZNSE, ZNS, AND CDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : 381 - &