APPLICATION OF AUGER DEPTH PROFILING TO METAL-SEMICONDUCTOR CONTACTS

被引：10

作者：

SINGER, KE

机构：

[1] Department of Electrical Engineering and Electronics, UMIST, Manchester, M60 1QD

来源：

THIN SOLID FILMS | 1979年 / 57卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90417-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The past few years have seen the growth of a number of techniques capable of giving elemental distributions in thin film systems. This paper describes the application of one such technique-Auger depth profiling-to a range of metal-semiconductor contact problems. The aim of these studies was to determine the extent to which metallurgical information can be correlated with the electrical properties of the device. The examples described are chosen to show the problems in interpretation of Auger data and the degree to which these data can elucidate the electrical properties. © 1979.

引用

页码：115 / 126

页数：12

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