AES INVESTIGATIONS OF AR+ ION RETENTION IN SI DURING AR SPUTTERING

[1] COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 257 - 278

[2] ARMINEN E, 1971, ANN ACAD SCI IENNI A, V6

[3] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392

[4] DAVIS LE, HDB AUGER ELECTRON S

[5] GIBBONS JF, 1976, PROJECTED RANGE STAT

[6] 3 TO 15 KEV AR+ INDUCED AUGER-ELECTRON EMISSION FROM SI AND AR [J]. APPLIED PHYSICS, 1977, 13 (03): : 261 - 266

[7] LEWIS PK, 1973, APPL PHYS LETT, V23, P260

[8] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER [J]. SURFACE SCIENCE, 1975, 49 (01) : 318 - 324

[9] PEARMAIN K, 1974, VACUUM, V25, P3

[10] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 31 - 40

[1] COLLECTION AND SPUTTERING EXPERIMENTS WITH NOBLE GAS IONS [J]. NUCLEAR INSTRUMENTS & METHODS, 1961, 11 (02): : 257 - 278

[2] ARMINEN E, 1971, ANN ACAD SCI IENNI A, V6

[3] INFLUENCE OF SPUTTERING, RANGE SHORTENING AND STRESS-INDUCED OUT-DIFFUSION ON RETENTION OF XENON IMPLANTED IN SILICON [J]. NUCLEAR INSTRUMENTS & METHODS, 1976, 132 (JAN-F): : 387 - 392

[4] DAVIS LE, HDB AUGER ELECTRON S

[5] GIBBONS JF, 1976, PROJECTED RANGE STAT

[6] 3 TO 15 KEV AR+ INDUCED AUGER-ELECTRON EMISSION FROM SI AND AR [J]. APPLIED PHYSICS, 1977, 13 (03): : 261 - 266

[7] LEWIS PK, 1973, APPL PHYS LETT, V23, P260

[8] FIRST-ORDER APPROXIMATION TO QUANTITATIVE AUGER ANALYSIS IN RANGE 100 TO 1000EV USING CMA ANALYZER [J]. SURFACE SCIENCE, 1975, 49 (01) : 318 - 324

[9] PEARMAIN K, 1974, VACUUM, V25, P3

[10] MODEL CALCULATION OF ION COLLECTION IN PRESENCE OF SPUTTERING .1. ZERO ORDER APPROXIMATION [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 31 - 40