EFFECT OF INTERFACE RECOMBINATION AT ALXGA1-XAS P-N-JUNCTION PERIMETERS ON PHOTO-LUMINESCENCE AND CURRENT

被引：11

作者：

HENRY, CH

LOGAN, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 04期

关键词：

D O I：

10.1116/1.569767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1471 / 1474

页数：4

共 12 条

[1] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J].

CASEY, HC ;

STERN, F .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :631-643

[2] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[3] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (06) :3530-3542

[4] ORIGIN OF N-CONGRUENT-+0-2 INJECTION CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

APPLIED PHYSICS LETTERS, 1977, 31 (07) :454-456

[5] NONRADIATIVE LARGE DARK SPOTS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

HENRY, CH ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3962-3970

[6] MACROSCOPIC DETERIORATION OF FLUORESCENCE FROM ALCHIGA1-CHIAS-GAAS DH MATERIAL FOLLOWING MICROSCOPIC PHYSICAL DAMAGE [J].

JOHNSTON, WD .

APPLIED PHYSICS LETTERS, 1974, 24 (10) :494-496

[7] STUDY OF DEEP LEVELS IN GAAS BY CAPACITANCE SPECTROSCOPY [J].

LANG, DV ;

LOGAN, RA .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1053-1066

[8]

LANG DV, 1976, 13 P C PHYS SEM ROM

[9] SURFACE EFFECTS OF GAAS0.6P0.4 LIGHT EMITTING DIODES [J].

LEISTIKO, O ;

BITTMANN, CA .

SOLID-STATE ELECTRONICS, 1973, 16 (12) :1321-1336

[10] INTEGRATED GAAS-ALXGA1-X AS DOUBLE-HETEROSTRUCTURE LASER WITH INDEPENDENTLY CONTROLLED OPTICAL OUTPUT DIVERGENCE [J].

LOGAN, RA ;

REINHART, FK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :461-464

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