ATOMIC-INTERLAYER-CONTROLLED DIFFUSION AT SEMICONDUCTOR-SEMICONDUCTOR INTERFACES

被引：17

作者：

MARGARITONDO, G ^{[1
]}

STOFFEL, NG ^{[1
]}

KATNANI, AD ^{[1
]}

BRILLSON, LJ ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：917 / 918

页数：2

共 8 条

[1] SMOOTH AND CONTINUOUS OHMIC CONTACTS TO GAAS USING EPITAXIAL GE FILMS [J].

ANDERSON, WT ;

CHRISTOU, A ;

DAVEY, JE .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (05) :2998-3000

[2] SURFACE-REACTIONS AND INTERDIFFUSION [J].

BACHRACH, RZ ;

BAUER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1149-1153

[3] GE-GAAS(110) INTERFACE FORMATION [J].

BAUER, RS ;

MCMENAMIN, JC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1444-1449

[4] ATOMIC MODULATION OF INTER-DIFFUSION AT AU-GAAS INTERFACES [J].

BRILLSON, LJ ;

MARGARITONDO, G ;

STOFFEL, NG .

PHYSICAL REVIEW LETTERS, 1980, 44 (10) :667-670

[5] CHEMICALLY-INDUCED CHARGE REDISTRIBUTION AT AL-GAAS INTERFACES [J].

BRILLSON, LJ ;

BACHRACH, RZ ;

BAUER, RS ;

MCMENAMIN, J .

PHYSICAL REVIEW LETTERS, 1979, 42 (06) :397-401

[6]

BRILLSON LJ, UNPUBLISHED

[7] THEORY OF THE OXIDATION OF METALS [J].

CABRERA, N ;

MOTT, NF .

REPORTS ON PROGRESS IN PHYSICS, 1948, 12 :163-184

[8]

MARGARITONDO G, 1979, J PHYS E, V12, P463

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