EXPLORATION OF GAAS STRUCTURES WITH PI-NU JUNCTION FOR COORDINATE SENSITIVE DETECTORS

被引：16

作者：

CHMILL, VB ^{[1
]}

CHUNTONOV, AV ^{[1
]}

VOROBIEV, AP ^{[1
]}

KHLUDKOV, SS ^{[1
]}

KORETSKI, AV ^{[1
]}

POTAPOV, AI ^{[1
]}

TOLBANOV, OP ^{[1
]}

机构：

[1] SIBERIAN INST PHYS & TECHNOL, TOMSK, RUSSIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 340卷 / 02期

关键词：

D O I：

10.1016/0168-9002(94)90109-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The results of a systematic study of GaAs samples as the basis for the construction of radiation resistant coordinate sensitive detectors are presented. The technology to manufacture high resistivity GaAs layers has been optimized. As a result we have produced samples with charge collection efficiency greater than 95% and with a time response of less than a few ns for minimum ionizing particle detection. The study of the radiation resistance of the GaAs samples has shown that their main characteristics degrade by less than by 20% at a neutron fluence of the order of 10(15) cm(-2) and do not worsen at a absorbed gamma-dose of 11 Mrad.

引用

页码：328 / 340

页数：13

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