NEARLY EQUILIBRIUM GROWTH OF IN1-XGAXASYP1-Y (0 LESS-THAN-OR-EQUAL-TO Y LESS-THAN-OR-EQUAL-TO 1) LATTICE-MATCHED TO (100) INP

被引：8

作者：

TABATABAIEALAVI, K

PEREA, EH

FONSTAD, CG

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 03期

关键词：

D O I：

10.1007/BF02654593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：591 / 603

页数：13

共 10 条

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[6] PHASE-DIAGRAM OF IN-GA-AS-P-QUATERNARY SYSTEM AND LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON INP SUBSTRATES [J].

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[8] EFFECT OF SUBSTRATE ORIENTATION ON THE LIQUID-SOLID DISTRIBUTION COEFFICIENTS FOR GAXIN1-XAS IN THE TEMPERATURE-RANGE 600-700-DEGREES-C [J].

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[9] PHASE-DIAGRAM CALCULATIONS FOR INUGA1-UPVAS1-V LATTICE MATCHED TO (111-B) INP, IN THE TEMPERATURE-RANGE 600-660-DEGREES-C [J].

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[10] IN1-XGAXASYP1-Y-INP DH LASERS FABRICATED ON INP (100) SUBSTRATES [J].

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