CONTROL OF PREFERENTIALLY ORIENTED CRYSTAL-GROWTH OF TITANIUM NITRIDE - EFFECTS OF NITROGEN ADSORPTION AND ION-BEAM IRRADIATION IN DYNAMIC MIXING PROCESS

被引：19

作者：

KIUCHI, M ^{[1
]}

CHAYAHARA, A ^{[1
]}

HORINO, Y ^{[1
]}

FUJII, K ^{[1
]}

SATOU, M ^{[1
]}

ENSINGER, W ^{[1
]}

机构：

[1] UNIV HEIDELBERG,INST PHYS CHEM,W-6900 HEIDELBERG,GERMANY

来源：

APPLIED SURFACE SCIENCE | 1992年 / 60-1卷

关键词：

D O I：

10.1016/0169-4332(92)90509-V

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Titanium nitride films which are deposited on a Si wafer by titanium evaporation and simultaneous nitrogen ion-beam irradiation have preferred orientations, which depend on Ti atom/N+ ion arrival ratio. The effects of nitrogen pressure and ion beam irradiation are discussed to clarify the mechanism of the variation of crystallization. Nitridation with adsorbed nitrogen leads to [111]-oriented TiN crystal growth. Ion bombardment induces [100]-oriented TiN crystal growth. This effect is covered by the nitridation with adsorbed nitrogen, for higher nitrogen pressure case. The difference in the growth rates of [111]-oriented crystals and that of [100]-oriented crystals leads to the variation of preferred orientations, and so the control of the orientation of crystal growth is available.

引用

页码：760 / 764

页数：5