INFRARED OPTICAL CHARACTERIZATION OF INAS/GA1-XINXSB SUPERLATTICES

被引：99

作者：

MILES, RH ^{[1
]}

CHOW, DH ^{[1
]}

SCHULMAN, JN ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,TJ WATSON SR LAB APPL PHYS,PASADENA,CA 91125

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.103425

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs/Ga1-xInxSb superlattices have been examined by photoluminescence, photoconductivity, and infrared optical transmission. Samples display clear photoconductive thresholds at energies in agreement with band gaps derived from photoluminescence. Far-infrared energy gaps (8-14 μm and beyond) are obtained for InAs/Ga0.75In0.25Sb superlattices with periods <75 Å, in good agreement with gaps calculated from a simple two-band model. An absorption coefficient of ∼2000 cm-1 at 10 μm is measured in a superlattice with an energy gap of 11.4 μm. The magnitude and shape of this absorption edge is comparable to that of bulk Hg1-xCdxTe, suggesting that infrared detectors based on InAs/Ga1-xInxSb superlattices may be competitive in the 8-14 μm range and beyond.

引用

页码：801 / 803

页数：3

共 11 条

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