THERMAL DONORS AND CARBON-OXYGEN DEFECTS IN SILICON

被引：21

作者：

LINDSTROM, JL

WEMAN, H

OEHRLEIN, GS

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1987年 / 99卷 / 02期

关键词：

D O I：

10.1002/pssa.2210990229

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：581 / 591

页数：11

共 20 条

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[6] MECHANISM OF THE FORMATION OF DONOR STATES IN HEAT-TREATED SILICON [J].

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[7]

LINDSTROM J, UNPUB

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[9]

OEDER R, 1983, DEFECTS SEMICONDUCTO, V2, P171

[10]

Oehrlein G. S., 1985, Thirteenth International Conference on Defects in Semiconductors, P701

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