VAPOR PHASE ETCHING OF GAAS IN H2-H2O FLOW SYSTEM

被引:11
作者
LIN, C
CHOW, L
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10.1149/1.2407525
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:407 / &
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[12]   THE REACTION OF GAP(S) WITH H2O(G) AND THE RANGE OF STABILITY OF GAP(S) UNDER PRESSURES OF GA2O AND P-2 [J].
THURMOND, CD ;
FROSCH, CJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (02) :184-191
[13]  
1960, JANAF INTERIM THERMO
[14]  
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