MICROSTRUCTURAL CHARACTERIZATION OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR

被引：29

作者：

CHANG, PH

SLAWINSKI, C

MAO, BY

LAM, HW

机构：

[1] TEXAS INSTRUMENTS INC,CTR SEMICOND PROC & DESIGN,DALLAS,TX 75262

[2] LAM ASSOCIATES,DALLAS,TX 75374

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 01期

关键词：

D O I：

10.1063/1.338850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：166 / 174

页数：9

共 21 条

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[3]

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[4]

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[6] SILICON ON INSULATOR STRUCTURES FORMED BY THE IMPLANTATION OF HIGH-DOSES OF REACTIVE IONS [J].

HEMMENT, PLF ;

PEART, RF ;

YAO, MF ;

STEPHENS, KG ;

ARROWSMITH, RP ;

CHATER, RJ ;

KILNER, JA .

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[7]

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[9]

LAM HW, 1984, MATER RES SOC S P, V33

[10]

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