DIFFUSION-DRIFT MODELING OF STRONG INVERSION-LAYERS

[1] FULLY MACROSCOPIC DESCRIPTION OF ELECTRICAL-CONDUCTION IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7018 - 7045

[2] FULLY MACROSCOPIC DESCRIPTION OF BOUNDED SEMICONDUCTORS WITH AN APPLICATION TO THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 6104 - 6119

[3] ANCONA MG, UNPUB PHYS REV B

[4] GREEN AE, 1964, ARCH RATION MECH AN, V16, P325

[5] SELF-CONSISTENT CALCULATION OF ELECTRON AND HOLE INVERSION CHARGES AT SILICON SILICON DIOXIDE INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3175 - 3183

[6] Stern F., 1970, Journal of Computational Physics, V6, P56, DOI 10.1016/0021-9991(70)90004-5

[7] STERN F, 1974, CRIT REV SOLID STATE, V5, P499

[1] FULLY MACROSCOPIC DESCRIPTION OF ELECTRICAL-CONDUCTION IN METAL-INSULATOR-SEMICONDUCTOR STRUCTURES [J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7018 - 7045

[2] FULLY MACROSCOPIC DESCRIPTION OF BOUNDED SEMICONDUCTORS WITH AN APPLICATION TO THE SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW B, 1980, 22 (12) : 6104 - 6119

[3] ANCONA MG, UNPUB PHYS REV B

[4] GREEN AE, 1964, ARCH RATION MECH AN, V16, P325

[5] SELF-CONSISTENT CALCULATION OF ELECTRON AND HOLE INVERSION CHARGES AT SILICON SILICON DIOXIDE INTERFACES [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (09) : 3175 - 3183

[6] Stern F., 1970, Journal of Computational Physics, V6, P56, DOI 10.1016/0021-9991(70)90004-5

[7] STERN F, 1974, CRIT REV SOLID STATE, V5, P499