OPTIMIZATION OF THE OPTICAL-SENSITIVITY OF P-I-N FET RECEIVERS

被引：8

作者：

VELLACOLEIRO, GP

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 06期

关键词：

D O I：

10.1109/55.713

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / 271

页数：3

共 9 条

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[2]

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[3] A LOW-POWER HIGH-SPEED ION-IMPLANTED JFET FOR INP-BASED MONOLITHIC OPTOELECTRONIC ICS [J].

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VELLACOLEIRO, GP ;

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OTA, Y ;

GUTH, G .

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[4] INTEGRATED IN0.53GA0.47AS P-I-N FET PHOTORECEIVER [J].

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[5]

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[6] A PLANAR INGAAS PIN JFET FIBER-OPTIC DETECTOR [J].

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IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (08) :1236-1240

[7] ORIGIN OF 1/F3/2 NOISE IN GAAS THIN-FILM RESISTORS AND MESFET [J].

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[8]

SMITH RG, 1982, SEMICONDUCTOR DEVICE

[9]

WILLIAMS GF, 1982, IEEE INT SOLID STATE, P160

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