ORIGIN OF 1/F3/2 NOISE IN GAAS THIN-FILM RESISTORS AND MESFET

被引：21

作者：

POUYSEGUR, M ^{[1
]}

GRAFFEUIL, J ^{[1
]}

CAZAUX, JL ^{[1
]}

机构：

[1] UNIV PAUL SABATIER,F-31079 TOULOUSE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 10期

关键词：

D O I：

10.1109/T-ED.1987.23214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2178 / 2184

页数：7

相关论文

共 20 条

[1] AHMED MK, 1982, THESIS TU AACHEN
[2] BAEK J, 1985, IEEE T ELECTRON DEVI, V32
[3] Chipman R., 1968, TRANSMISSION LINES
[4] DIEUDONNE JM, 1986, IEEE T ELECTRON DEVI, V33
[5] LOW-FREQUENCY NOISE IN GALLIUM-ARSENIDE MESFETS
DUH, KH
ZHU, XC
VANDERZIEL, A
[J]. SOLID-STATE ELECTRONICS, 1984, 27 (11) : 1003 - &
[6] EVIDENCE OF DETRIMENTAL SURFACE EFFECTS ON GAAS POWER MESFETS
DUMAS, JM
PAUGAM, J
LEMOUELLIC, C
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1094 - 1095
[7] FUCEI RA, 1983, IEEE MTT S, P282
[8] LOW-FREQUENCY NOISE PHYSICAL ANALYSIS FOR THE IMPROVEMENT OF THE SPECTRAL PURITY OF GAAS-FETS OSCILLATORS
GRAFFEUIL, J
TANTRARONGROJ, K
SAUTEREAU, JF
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (05) : 367 - 374
[9] ANALYSIS OF CAPACITANCE AND TRANSCONDUCTANCE FREQUENCY DISPERSIONS IN MESFETS FOR SURFACE CHARACTERIZATION
GRAFFEUIL, J
HADJOUB, Z
FORTEA, JP
POUYSEGUR, M
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (10) : 1087 - 1097
[10] LOW-FREQUENCY NOISE IN GAAS SCHOTTKY-GATE FETS
GRAFFEUIL, J
CAIMINADE, J
[J]. ELECTRONICS LETTERS, 1974, 10 (13) : 266 - 268