ELECTRONIC PROPERTIES OF CHALCOGENIDE GLASSES AND THEIR USE IN XEROGRAPHY

被引：33

作者：

PFISTER, G ^{[1
]}

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 06期

关键词：

amorphous semiconductors; charge transport; photogeneration; xerography;

D O I：

10.1007/BF02651186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An overview of the xerographic process and the relevant physical phenomena involved in the formation of the latent image is presented. Emphasis is on the electronic properties of a-selenium but some properties of other disordered solids will be mentioned in order to amplify features general to the disordered solid state. Specifically the discussion includes a description of the Onsager mechanism of charge generation, transient dispersive transport, and recent models of defects in chalcogenide glasses. © 1979 AIME.

引用

页码：789 / 837

页数：49

共 58 条

[1] PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS [J].