ION-IMPLANTED SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTOR

被引:2
作者
MOLINE, RA [1 ]
GIBSON, WC [1 ]
HECK, LD [1 ]
机构
[1] BELL LABS INC, MURRAY HILL, NJ 07974 USA
关键词
D O I
10.1109/T-ED.1973.17645
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:317 / 320
页数:4
相关论文
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