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EFFECT OF NEUTRON-IRRADIATION ON GAAS1-XPX ELECTROLUMINESCENT DIODES
被引:13
作者
:
EPSTEIN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
EPSTEIN, AS
SHARE, S
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
SHARE, S
POLIMADEI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
POLIMADEI, RA
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
HERZOG, AH
机构
:
[1]
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
[2]
MONSANTO CO, ST LOUIS, MO 63166 USA
来源
:
APPLIED PHYSICS LETTERS
|
1973年
/ 23卷
/ 08期
关键词
:
D O I
:
10.1063/1.1654963
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:472 / 474
页数:3
相关论文
共 9 条
[1]
NEUTRON DAMAGE IN EPITAXIAL GAAS LASER DIODES
BARNES, CE
论文数:
0
引用数:
0
h-index:
0
BARNES, CE
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(05)
: 1941
-
+
[2]
GAMMA-IRRADIATION AND ANNEALING EFFECTS IN NITROGEN-DOPED GAAS1-XPX GREEN AND YELLOW LIGHT-EMITTING DIODES
EPSTEIN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
EPSTEIN, AS
SHARE, S
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
SHARE, S
POLIMADEI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
POLIMADEI, RA
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
HERZOG, AH
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
: 386
-
390
[3]
EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
HERZOG, AH
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(06)
: 184
-
&
[4]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
: 1830
-
&
[5]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[6]
LARIN F, 1968, RADIATION EFFECTS SE
[7]
ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
STEIN, HJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(13)
: 5300
-
+
[8]
Ziman J. M., 1960, ELECT PHONONS
[9]
OPTICAL PHASE SHIFT MEASUREMENT OF RESIDUAL DEFECTS IN VAPOR EPITAXIAL GAASP
ZWICKER, HR
论文数:
0
引用数:
0
h-index:
0
ZWICKER, HR
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
ALFEROV, ZI
论文数:
0
引用数:
0
h-index:
0
ALFEROV, ZI
[J].
SOLID STATE COMMUNICATIONS,
1971,
9
(09)
: 587
-
&
←
1
→
共 9 条
[1]
NEUTRON DAMAGE IN EPITAXIAL GAAS LASER DIODES
BARNES, CE
论文数:
0
引用数:
0
h-index:
0
BARNES, CE
[J].
JOURNAL OF APPLIED PHYSICS,
1971,
42
(05)
: 1941
-
+
[2]
GAMMA-IRRADIATION AND ANNEALING EFFECTS IN NITROGEN-DOPED GAAS1-XPX GREEN AND YELLOW LIGHT-EMITTING DIODES
EPSTEIN, AS
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
EPSTEIN, AS
SHARE, S
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
SHARE, S
POLIMADEI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
POLIMADEI, RA
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
HARRY DIAMOND LABS, WASHINGTON, DC 20438 USA
HERZOG, AH
[J].
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1972,
NS19
(06)
: 386
-
390
[3]
EFFECT OF NITROGEN DOPING ON GAAS 1-XPX ELECTROLUMINESCENT DIODES
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
GROVES, WO
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
HERZOG, AH
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
CRAFORD, MG
[J].
APPLIED PHYSICS LETTERS,
1971,
19
(06)
: 184
-
&
[4]
ELECTROLUMINESCENCE OF DIFFUSED GAAS1-XPX DIODES WITH LOW DONOR CONCENTRATIONS
HERZOG, AH
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
HERZOG, AH
GROVES, WO
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
GROVES, WO
CRAFORD, MG
论文数:
0
引用数:
0
h-index:
0
机构:
Monsanto Company, St. Louis
CRAFORD, MG
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(04)
: 1830
-
&
[5]
ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING
KUNO, HJ
论文数:
0
引用数:
0
h-index:
0
KUNO, HJ
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1964,
ED11
(01)
: 8
-
&
[6]
LARIN F, 1968, RADIATION EFFECTS SE
[7]
ELECTRICAL STUDIES OF LOW-TEMPERATURE NEUTRON- AND ELECTRON-IRRADIATED EPITAXIAL NORMAL-TYPE GAAS
STEIN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories, Albuquerque
STEIN, HJ
[J].
JOURNAL OF APPLIED PHYSICS,
1969,
40
(13)
: 5300
-
+
[8]
Ziman J. M., 1960, ELECT PHONONS
[9]
OPTICAL PHASE SHIFT MEASUREMENT OF RESIDUAL DEFECTS IN VAPOR EPITAXIAL GAASP
ZWICKER, HR
论文数:
0
引用数:
0
h-index:
0
ZWICKER, HR
SCIFRES, DR
论文数:
0
引用数:
0
h-index:
0
SCIFRES, DR
HOLONYAK, N
论文数:
0
引用数:
0
h-index:
0
HOLONYAK, N
DUPUIS, RD
论文数:
0
引用数:
0
h-index:
0
DUPUIS, RD
BURNHAM, RD
论文数:
0
引用数:
0
h-index:
0
BURNHAM, RD
BURD, JW
论文数:
0
引用数:
0
h-index:
0
BURD, JW
ALFEROV, ZI
论文数:
0
引用数:
0
h-index:
0
ALFEROV, ZI
[J].
SOLID STATE COMMUNICATIONS,
1971,
9
(09)
: 587
-
&
←
1
→