EXISTENCE OF GA-VACANCY AND AS-TRIMER INDUCED (2X2) PHASES ON THE GAAS(111)A SURFACE

被引：28

作者：

THORNTON, JMC

UNSWORTH, P

JACKSON, MD

WEIGHTMAN, P

WOOLF, DA

机构：

[1] UNIV LIVERPOOL,DEPT PHYS,LIVERPOOL L69 3BX,MERSEYSIDE,ENGLAND

[2] UNIV WALES COLL CARDIFF,DEPT PHYS,CARDIFF CF2 3YB,S GLAM,WALES

来源：

SURFACE SCIENCE | 1994年 / 316卷 / 03期

关键词：

D O I：

10.1016/0039-6028(94)91215-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The GaAs(111)A-(2 x 2) surface has been examined using scanning tunnelling microscopy (STM), and found to exhibit two phases with the same periodicity. At high surface As concentrations images consistent with an As-trimer structure are seen, which transforms into a Ga-vacancy structure as the excess As desorbs at higher temperatures. Both filled and empty state images of the vacancy structure are of atomic resolution, and reveal a relaxation in the surface bilayer in agreement with predictions.

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页码：231 / 237

页数：7

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