ALUMINA DEPOSITION BY ACTIVATED REACTIVE EVAPORATION

被引：33

作者：

BUNSHAH, RF ^{[1
]}

SCHRAMM, RJ ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT MAT,LOS ANGELES,CA 90024

来源：

关键词：

D O I：

10.1016/0040-6090(77)90120-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：211 / 216

页数：6

共 21 条

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[3] BUNSHAH RF, 1975, Patent No. 1392583
[4] BUNSHAH RF, 1974, SCI TECHNOLOGY SURFA
[5] Campbell DS, 1970, HDB THIN FILM TECHNO
[6] COLEN M, 1975, J VAC SCI TECHNOL, V13, P536
[7] ELECTRICAL PROPERTIES OF EVAPORATED ALUMINUM OXIDE FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (01) : 12 - 15
[8] PRELIMINARY INVESTIGATIONS OF REACTIVELY EVAPORATED ALUMINUM OXIDE FILMS ON SILICON
FERRIEU, E
PRUNIAUX, B
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 1008 - +
[9] HIESINGER L, 1951, FESTCHRIFT 100 JAHRE, P376
[10] A12O3 FILMS PREPARED BY ELECTRON-BEAM EVAPORATION OF HOT-PRESSED A12O3 IN OXYGEN AMBIENT
HOFFMAN, D
LEIBOWITZ, D
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (01): : 107 - +