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PHOTOLUMINESCENCE TRANSITIONS OF THE DEEP EL2 DEFECT IN GALLIUM-ARSENIDE
被引:15
作者
:
NISSEN, MK
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Simon Fraser University, Burnaby, Canada V5A 1S6, BC
NISSEN, MK
STEINER, T
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Simon Fraser University, Burnaby, Canada V5A 1S6, BC
STEINER, T
BECKETT, DJS
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Simon Fraser University, Burnaby, Canada V5A 1S6, BC
BECKETT, DJS
THEWALT, MLW
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physics, Simon Fraser University, Burnaby, Canada V5A 1S6, BC
THEWALT, MLW
机构
:
[1]
Department of Physics, Simon Fraser University, Burnaby, Canada V5A 1S6, BC
来源
:
PHYSICAL REVIEW LETTERS
|
1990年
/ 65卷
/ 18期
关键词
:
D O I
:
10.1103/PhysRevLett.65.2282
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
Fourier-transform photoluminescence spectroscopy has been used to obtain detailed and unequivocal information on the two major transitions involving the deep EL2 level in semi-insulating gallium arsenide. We report the first observation of a shallow, hydrogenic state of neutral EL2, which leads to sharp structure in the luminescence spectrum. This new fine structure should prove extremely useful in perturbation studies of the EL2 defect. These new transitions also locate the energy position of neutral EL2 within the band gap with unprecedented precision. © 1990 The American Physical Society.
引用
收藏
页码:2282 / 2285
页数:4
相关论文
共 23 条
[1]
PHOTOSENSITIVITY OF THE 714-CM-1 AND 730-CM-1 ABSORPTION-BANDS IN SEMI-INSULATING GAAS - EVIDENCE FOR A DEEP DONOR INVOLVING OXYGEN
ALT, HC
论文数:
0
引用数:
0
h-index:
0
ALT, HC
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(15)
: 1445
-
1447
[2]
ALT HC, COMMUNICATION
[3]
SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: R123
-
R181
[4]
NATIVE DEFECTS IN GALLIUM-ARSENIDE
BOURGOIN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
BOURGOIN, JC
VONBARDELEBEN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
VONBARDELEBEN, HJ
STIEVENARD, D
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
STIEVENARD, D
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(09)
: R65
-
R91
[5]
DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
CHANTRE, A
VINCENT, G
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
VINCENT, G
DUBOIS
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
DUBOIS
[J].
PHYSICAL REVIEW B,
1981,
23
(10):
: 5335
-
5359
[6]
THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2
DABROWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
DABROWSKI, J
SCHEFFLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
SCHEFFLER, M
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(21)
: 2183
-
2186
[7]
OPTICAL-PROPERTIES OF EL2
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
KAMINSKA, M
[J].
REVUE DE PHYSIQUE APPLIQUEE,
1988,
23
(05):
: 793
-
802
[8]
IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
SKOWRONSKI, M
KUSZKO, W
论文数:
0
引用数:
0
h-index:
0
KUSZKO, W
[J].
PHYSICAL REVIEW LETTERS,
1985,
55
(20)
: 2204
-
2207
[9]
INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
SKOWRONSKI, M
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 302
-
304
[10]
KAUFMANN U, 1989, FESTKOR A S, V29, P183
←
1
2
3
→
共 23 条
[1]
PHOTOSENSITIVITY OF THE 714-CM-1 AND 730-CM-1 ABSORPTION-BANDS IN SEMI-INSULATING GAAS - EVIDENCE FOR A DEEP DONOR INVOLVING OXYGEN
ALT, HC
论文数:
0
引用数:
0
h-index:
0
ALT, HC
[J].
APPLIED PHYSICS LETTERS,
1989,
54
(15)
: 1445
-
1447
[2]
ALT HC, COMMUNICATION
[3]
SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
论文数:
0
引用数:
0
h-index:
0
BLAKEMORE, JS
[J].
JOURNAL OF APPLIED PHYSICS,
1982,
53
(10)
: R123
-
R181
[4]
NATIVE DEFECTS IN GALLIUM-ARSENIDE
BOURGOIN, JC
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
BOURGOIN, JC
VONBARDELEBEN, HJ
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
VONBARDELEBEN, HJ
STIEVENARD, D
论文数:
0
引用数:
0
h-index:
0
机构:
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
INST SUPER ELECTR NORD,PHYS SOLIDES LAB,F-59046 LILLE,FRANCE
STIEVENARD, D
[J].
JOURNAL OF APPLIED PHYSICS,
1988,
64
(09)
: R65
-
R91
[5]
DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS
CHANTRE, A
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
CHANTRE, A
VINCENT, G
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
VINCENT, G
DUBOIS
论文数:
0
引用数:
0
h-index:
0
机构:
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
INST NATL SCI APPL,PHYS MAT LAB,F-6921 LYON,FRANCE
DUBOIS
[J].
PHYSICAL REVIEW B,
1981,
23
(10):
: 5335
-
5359
[6]
THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2
DABROWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
DABROWSKI, J
SCHEFFLER, M
论文数:
0
引用数:
0
h-index:
0
机构:
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
MAX PLANCK GESELL,FRITZ HABER INST,D-1000 BERLIN 33,FED REP GER
SCHEFFLER, M
[J].
PHYSICAL REVIEW LETTERS,
1988,
60
(21)
: 2183
-
2186
[7]
OPTICAL-PROPERTIES OF EL2
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
KAMINSKA, M
[J].
REVUE DE PHYSIQUE APPLIQUEE,
1988,
23
(05):
: 793
-
802
[8]
IDENTIFICATION OF THE 0.82-EV ELECTRON TRAP, EL2 IN GAAS, AS AN ISOLATED ANTISITE ARSENIC DEFECT
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
SKOWRONSKI, M
KUSZKO, W
论文数:
0
引用数:
0
h-index:
0
KUSZKO, W
[J].
PHYSICAL REVIEW LETTERS,
1985,
55
(20)
: 2204
-
2207
[9]
INTRACENTER TRANSITIONS IN THE DOMINANT DEEP LEVEL (EL2) IN GAAS
KAMINSKA, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
KAMINSKA, M
SKOWRONSKI, M
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
SKOWRONSKI, M
LAGOWSKI, J
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
LAGOWSKI, J
PARSEY, JM
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
PARSEY, JM
GATOS, HC
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,CAMBRIDGE,MA 02139
MIT,CAMBRIDGE,MA 02139
GATOS, HC
[J].
APPLIED PHYSICS LETTERS,
1983,
43
(03)
: 302
-
304
[10]
KAUFMANN U, 1989, FESTKOR A S, V29, P183
←
1
2
3
→