SOLID-PHASE GROWTH OF GE FROM EVAPORATED AL LAYER

[1] ELLIOTT RP, 1958, CONSTITUION BINARY A, P96

[2] ELLIOTT RP, 1965, CONSTITUTION BINAR S, P38

[3] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[4] HANSEN M, 1958, CONSTITUTION BINARY, P96

[5] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 171 - &

[6] FORMATION OF INJECTING AND BLOCKING CONTACTS ON HIGH-RESISTIVITY GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 323 - +

[7] SHUNK FA, 1969, CONSTITUTION BINA S2, P26

[1] ELLIOTT RP, 1958, CONSTITUION BINARY A, P96

[2] ELLIOTT RP, 1965, CONSTITUTION BINAR S, P38

[3] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J]. APPLIED PHYSICS LETTERS, 1970, 17 (08) : 332 - +

[4] HANSEN M, 1958, CONSTITUTION BINARY, P96

[5] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 171 - &

[6] FORMATION OF INJECTING AND BLOCKING CONTACTS ON HIGH-RESISTIVITY GERMANIUM [J]. APPLIED PHYSICS LETTERS, 1972, 20 (08) : 323 - +

[7] SHUNK FA, 1969, CONSTITUTION BINA S2, P26