ELECTRON-BEAM LITHOGRAPHY FOR SMALL MOSFETS

被引：17

作者：

WATTS, RK

FICHTNER, W

FULS, EN

THIBAULT, LR

JOHNSTON, RL

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 11期

关键词：

D O I：

10.1109/T-ED.1981.20611

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1338 / 1345

页数：8

相关论文

共 20 条

[1] PLANARIZATION OF PHOSPHORUS-DOPED SILICON DIOXIDE
ADAMS, AC
CAPIO, CD
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (02) : 423 - 429
[2] BAGLEY BG, 1979, B AM PHYS SOC, V24, P399
[3] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION
BREWS, JR
FICHTNER, W
NICOLLIAN, EH
SZE, SM
[J]. ELECTRON DEVICE LETTERS, 1980, 1 (01): : 2 - 4
[4] COOPER JA, 1980, 38TH ANN DEV RES C C
[5] SIZE EFFECTS IN E-BEAM FABRICATED MOS DEVICES
ELLIOTT, MT
SPLINTER, MR
JONES, AB
REEKSTIN, JP
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 469 - 475
[6] EBES - PRACTICAL ELECTRON LITHOGRAPHIC SYSTEM
HERRIOTT, DR
COLLIER, RJ
ALLES, DS
STAFFORD, JW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (07) : 385 - 392
[7] Hunter W. R., 1981, IEEE Electron Device Letters, VEDL-2, P4, DOI 10.1109/EDL.1981.25319
[8] BULK HOT-ELECTRON PROPERTIES OF CUBIC SEMICONDUCTORS
JACOBONI, C
REGGIANI, L
[J]. ADVANCES IN PHYSICS, 1979, 28 (04) : 493 - 553
[9] DESIGN AND PERFORMANCE OF MICRON-SIZE DEVICES
KLAASSEN, FM
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (03) : 565 - 571
[10] ELECTRON-BEAM RESISTS FOR LIFT-OFF PROCESSING WITH POTENTIAL APPLICATION TO JOSEPHSON INTEGRATED-CIRCUITS
MAGERLEIN, JH
WEBB, DJ
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (05) : 554 - 562