EXPERIMENTAL-STUDY OF THE AMORPHOUS PHASES OF GROUP-IV SEMICONDUCTORS BY THE SN-119M MOSSBAUER PROBE

被引：17

作者：

NANVER, LK ^{[1
]}

WEYER, G ^{[1
]}

DEUTCH, BI ^{[1
]}

机构：

[1] AARHUS UNIV, INST PHYS, DK-8000 AARHUS, DENMARK

来源：

ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER | 1982年 / 47卷 / 02期

关键词：

D O I：

10.1007/BF01441292

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：103 / 113

页数：11

共 31 条

[1] ADLER D, 1972, AMORPHOUS SEMICONDUC
[2] VIBRATIONAL PROPERTIES OF AMORPHOUS SI AND GE
ALBEN, R
WEAIRE, D
SMITH, JE
BRODSKY, MH
[J]. PHYSICAL REVIEW B, 1975, 11 (06) : 2271 - 2296
[3] CALIBRATION OF ISOMER-SHIFT FOR SN-119
ANTONCIK, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02): : 605 - 611
[4] AXE JD, 1974, TETRAHEDRALLY BONDED, P279
[5] BRELOT A, 1972, ANN C NUCL SPACE RAD, P220
[6] INFRARED VIBRATIONAL-SPECTRA OF AMORPHOUS SI AND GE
BRODSKY, MH
LURIO, A
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1646 - 1651
[7] Coey J. M. D., 1974, J PHYS FRANCE C6, V35, P89
[8] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON
CULLIS, AG
SEIDEL, TE
MEEK, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) : 5188 - 5198
[9] THE TIN-VACANCY PAIR DEFECT IN SILICON
DAMGAARD, S
PETERSEN, JW
WEVER, G
[J]. HYPERFINE INTERACTIONS, 1981, 10 (1-4): : 751 - 757
[10] DEARNALEY G, 1973, ION IMPLANTATION, P122