INVESTIGATION OF SILICON TRANSPORT IN THE NEUTRAL BACKGROUND OF A PLASMA ACTIVATED REACTIVE EVAPORATION SYSTEM

被引：10

作者：

HIGGINS, B

DURANDET, A

BOSWELL, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 02期

关键词：

D O I：

10.1116/1.587996

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The transport of silicon vapor from an electron-beam evaporation source through argon and hydrogen gas in pressures near 1.0 mTorr has been studied. The flux-distance relationships for the effusion/diffusion of the evaporant through the device are found to vary with the type of filling gas. The investigation includes both a simple theoretical model and experiment. The results of each study are in good agreement. Cross sections for the energy-averaged momentum transfer collisions of silicon with the filling gases (argon, hydrogen) at thermal energies have been determined.

引用

页码：192 / 197

页数：6

共 16 条

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